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1 impurity ion
домішковий іонEnglish-Ukrainian dictionary of microelectronics > impurity ion
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2 impurity-ion beam
пучок іонів домішкиEnglish-Ukrainian dictionary of microelectronics > impurity-ion beam
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3 acceptor(-impurity)ion
іон акцепторної домішкиEnglish-Ukrainian dictionary of microelectronics > acceptor(-impurity)ion
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4 acceptor(-impurity)ion
іон акцепторної домішкиEnglish-Ukrainian dictionary of microelectronics > acceptor(-impurity)ion
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5 donor(-impurity)ion
іон донорної домішціEnglish-Ukrainian dictionary of microelectronics > donor(-impurity)ion
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6 donor(-impurity)ion
іон донорної домішціEnglish-Ukrainian dictionary of microelectronics > donor(-impurity)ion
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7 n-type impurity ion
іон донорної домішкиEnglish-Ukrainian dictionary of microelectronics > n-type impurity ion
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8 p-type impurity ion
іон акцепторної домішкиEnglish-Ukrainian dictionary of microelectronics > p-type impurity ion
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9 ion
іон- acceptor-impurityion- acceptorion
- ad ion
- donor-impurityion
- donorion
- dopant ion
- doping ion
- impurity ion
- n-type impurity ion
- parent molecular ions
- p-type impurity ion
- reactive ion -
10 impurity
1) (легуюча) домішка 2) забруднення, небажана домішка - atomic impurity
- background impurity
- base impurity
- channel-stop impurity
- compensated impurity
- compensating impurity
- conductivity -type- determining impurity
- conductivity determining impurity
- contaminating impurity
- deep-level impurity
- deep-lying impurity
- diffusant impurity
- diffusing impurity
- donor impurity
- dopant impurity
- doping impurity
- emitter impurity
- free carrier impurity
- group V impurity
- implanted impurity
- interstitial impurity
- ion implanted impurity
- lifetime killing impurity
- lifetime shortening impurity
- migrating impurity
- molecular impurity
- n-type impurity
- polarized impurity
- p-type impurity
- shallow-level impurity
- shallow-lying impurity
- spin-on impurity
- stoichiometric impurity
- substitutional impurity
- transition metal impurity
- trap impurity
- ultratrace impurity -
11 ion implanted impurity
іонно-імплантована домішкаEnglish-Ukrainian dictionary of microelectronics > ion implanted impurity
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12 beam
промінь; пучок - excimer beam
- Gaussian beam
- impurity-ion beam
- Kauffman ion beam
- microfocused ion beam
- molecular beam
- oxigen plasma beam
- plasma beam
- reactive-ion beam
- shaped beam -
13 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
14 implant
1. ім.3) рідк. іонно-імплантована область2. дієсл. імплантувати іони домішки - depletion ion implant
- depletion implant
- enhancement ion implant
- enhancement implant
- high-current density implant
- single-ion implant
- source-drain implant
- well implant -
15 profile
1. ім.1) профіль2) розріз; перетин2. дієсл. профілювати - Auger depth profile
- charge-carrier density profile
- chip profile
- concentration profile
- density profile
- depth profile
- diffusion profile
- dopant profile
- doping profile
- drift mobility profile
- etch profile
- firing profile
- Gaussian impurity profile
- graded profile
- hyperabrupt profile
- impurity profile
- ion-implantation profile
- lateral doping profile
- low profile
- n profile
- p profile
- potential profile
- resist profile
- resistivity profile
- solder-melt profile
- tailored doping profile
- undercut profile
- vertical doping profile -
16 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer
См. также в других словарях:
impurity ion — priemaišinis jonas statusas T sritis fizika atitikmenys: angl. extrinsic ion; foreign ion; impurity ion vok. Störion, n rus. примесный ион, m pranc. ion d’impureté, m; ion extrinsèque, m … Fizikos terminų žodynas
impurity ion implantation density — implantuotųjų priemaišų jonų tankis statusas T sritis radioelektronika atitikmenys: angl. impurity ion implantation density vok. implantierte Dotantenmenge, f rus. плотность имплантированных ионов примеси, f pranc. densité de dopage des ions… … Radioelektronikos terminų žodynas
ion-implanted impurity — implantuotoji priemaiša statusas T sritis radioelektronika atitikmenys: angl. implanted dopant; implanted impurity; ion implanted impurity vok. Implantationsstoff, m; implantierter Dotant, m; ionenimplantierter Dotant, m rus. ионно… … Radioelektronikos terminų žodynas
ion d’impureté — priemaišinis jonas statusas T sritis fizika atitikmenys: angl. extrinsic ion; foreign ion; impurity ion vok. Störion, n rus. примесный ион, m pranc. ion d’impureté, m; ion extrinsèque, m … Fizikos terminų žodynas
ion extrinsèque — priemaišinis jonas statusas T sritis fizika atitikmenys: angl. extrinsic ion; foreign ion; impurity ion vok. Störion, n rus. примесный ион, m pranc. ion d’impureté, m; ion extrinsèque, m … Fizikos terminų žodynas
ion implantation — Electronics. a method of implanting impurities below the surface of a solid, usually a semiconductor, by bombarding the solid with a beam of ions of the impurity. [1960 65] * * * ion implantation noun The introduction of ions into a crystalline… … Useful english dictionary
ion implantation — Electronics. a method of implanting impurities below the surface of a solid, usually a semiconductor, by bombarding the solid with a beam of ions of the impurity. [1960 65] * * * … Universalium
extrinsic ion — priemaišinis jonas statusas T sritis fizika atitikmenys: angl. extrinsic ion; foreign ion; impurity ion vok. Störion, n rus. примесный ион, m pranc. ion d’impureté, m; ion extrinsèque, m … Fizikos terminų žodynas
foreign ion — priemaišinis jonas statusas T sritis fizika atitikmenys: angl. extrinsic ion; foreign ion; impurity ion vok. Störion, n rus. примесный ион, m pranc. ion d’impureté, m; ion extrinsèque, m … Fizikos terminų žodynas
implanted impurity — implantuotoji priemaiša statusas T sritis radioelektronika atitikmenys: angl. implanted dopant; implanted impurity; ion implanted impurity vok. Implantationsstoff, m; implantierter Dotant, m; ionenimplantierter Dotant, m rus. ионно… … Radioelektronikos terminų žodynas
Madison Symmetric Torus — Infobox Magnetic Fusion Device name = Madison Symmetric Torus dev type=Reversed field pinch loc=Madison, Wisconsin, USA rad maj = 1.50 m rad min = 52 cm aspect = 2.88|The Madison Symmetric Torus (MST) is a reversed field pinch (RFP) physics… … Wikipedia
